MT40A512M16LY-062E AAT:E vs MT40A256M16LY-062E 对比

详细并排对比 MT40A512M16LY-062E AAT:E 出自 Micron Technology 和 MT40A256M16LY-062E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT40A512M16LY-062E AAT:E MT40A512M16LY-062E AAT:E - 8Gbit DDR4 SDRAM 1.6GHz | Micron

MT40A512M16LY-062E AAT:E - 8Gbit DDR4 SDRAM 1.6GHz | Micron

MT40A512M16LY-062E AAT:E ✓ 量产中
Micron Technology
MT40A256M16LY-062E MT40A256M16LY-062E - 4Gb DDR4 SDRAM x16 | Micron

MT40A256M16LY-062E - 4Gb DDR4 SDRAM x16 | Micron

MT40A256M16LY-062E ✓ 量产中

规格对比

参数 MT40A512M16LY-062E AAT:E MT40A256M16LY-062E
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $9.20 $5.30
存储器类型 DDR4 SDRAM DDR4 SDRAM
存储容量 8 Gbit (1 GB) 4 Gbit
Memory Organization 512M x 16 —
接口 Parallel Parallel
Clock Frequency 1.6 GHz 1.6 GHz
Access Time 19 ns —
电源电压 1.2 V —
Speed Grade 062E —
封装 96-FBGA (7.5 x 13.5 mm) 96-FBGA (7.5 x 13.5 mm)
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: operating temperature range] —
Package Height [DATA_NEEDED: package max height] —
MSL Rating [DATA_NEEDED: moisture sensitivity level] —
Ordering Code Suffix AAT:E (temperature/package option per Micron code) —
RoHS 状态 Compliant Compliant (F = RoHS/lead-free finish)
Moisture Packaging [DATA_NEEDED: packing type for AAT:E suffix] —
Data Rate Class DDR4-3200 (062E speed bin) DDR4-2666 (062E speed grade)
存储组织 — 256M x16
Access Time (tAA) — 19 ns
Supply Voltage (VDD) — 1.2 V
Operating Temperature (IT variant) — -40C to +95C
Auto Self-Refresh — Yes
Auto Precharge — Yes
Write Leveling — Yes
CRC (Command/Address) — Yes
Data Mask (DM) — Yes
Dynamic On-Chip Termination (ODT) — Yes
ZQ Calibration — Yes
FBGA Code — D9XSG (AUT variant)

数据手册与资源

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